2N3055 NPN Silicon Power Transistor

Discription
The 2N3055 (NPN) is a silicon transistor in a TO3 type case designed for general purpose switching and amplifier applications.

Features:
DC Current Gain: hFE = 20 - 70 @ IC = 4A
Collector-Emitter Saturation Voltage: VCE(sat) = 1.1V (Max) @ IC = 4A
Excellent Safe Operating Area

Absolute Maximum Ratings:
Collector-Emitter Voltage, VCEo. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
Collector-Emitter Voltage, VCEo. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70V
Collector-Base Voltage, VCb . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
Emitter-Base Voltage, VEb . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V
Continuous Collector Current,Ic. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A
Base Current,Ib . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7A

This is a full specification device, with very low leakage and good gain. It is fully tested and come with a technical data sheet and pin-out guide.